The need to the energy keeps growing as human society develops very quickly every day. Along with the emergence of the energy crisis, people realize the importance of the renewable energy. The solar energy, as a very important part of renewable energy, is more and more concerned by people because it has no pollution. As the cost of solar cells based on silicon is very high, CIS(CIGS) thin film solar cells get a very big development because of its high conversion efficiency,low manufacturing cost and stability.CdS, as the buffer layers of CIS(CIGS) thin film solar cells, are very important to the whole function of the solar cells. There are several aspects discussed in this thesis:The thesis made the elucidation to the traditional manufacturing methods of the CdS buffer layers of CIS(CIGS) thin film solar cells. It analyzed the influence of the treatment before deposition to the films\’ light sensitivity and voltage endurement.The thesis used the Ion Assisted Deposition method to deposite CdS buffer layers. It analyzed the influence of deposing factors such as substrate temperature, evaporation rate, beam density and screen pole voltage to the quality of coating surface, electric resistance and band gap by using the orthogonal intersection experiment method. It acquired the best IAD technology factors and analyzing the advantage and disadvantage of IAD technology.The thesis also analyzed the influence to thin films’performance of air annealing after the film deposition. Many experiments are done to acquire the best anneal temperature and time. So we accumulated some guiding significance results for the future study. It analyzed the factors that how annealing affects the coating surface and electric resistance.At last, the thesis studied the characteristics of the CIS semi-conductor material, analyzed the principle mechanism of the CIS(CIGS) thin film layers, summarized the main methods of the CIS(CIGS) thin film solar cells manufacturing.

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